inchange semiconductor product specification silicon npn power transistors BDX53/a/b/c description ? with to-220c package ? high dc current gain ? darlington ? complement to type bdx54/a/b/c applications ? power linear and switching applications ? hammer drivers,audio amplifiers pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit BDX53 45 BDX53a 60 BDX53b 80 v cbo collector-base voltage BDX53c open emitter 100 v BDX53 45 BDX53a 60 BDX53b 80 v ceo collector-emitter voltage BDX53c open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current-dc 8 a i cm collector current-pulse 12 a i b base current 0.2 a p c collector power dissipation t c =25 ?? 60 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 2.08 ??/w
inchange semiconductor product specification 2 silicon npn power transistors BDX53/a/b/c characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit BDX53 45 BDX53a 60 BDX53b 80 v ceo(sus) collector-emitter sustaining voltage BDX53c i c =0.1a, i b =0 100 v v cesat collector-emitter saturation voltage i c =3a ,i b =12ma 2.0 v v be sat base-emitter saturation voltage i c =3a ,i b =12ma 2.5 v BDX53 v cb =45v, i e =0 BDX53a v cb =60v, i e =0 BDX53b v cb =80v, i e =0 i cbo collector cut-off current BDX53c v cb =100v, i e =0 0.2 ma BDX53 v ce =22v, i b =0 BDX53a v ce =30v, i b =0 BDX53b v ce =40v, i b =0 i ceo collector cut-off current BDX53c v ce =50v, i b =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 2.0 ma h fe dc current gain i c =3a ; v ce =3v 750 v f-1 forward diode voltage i f =3a 1.8 2.5 v v f-2 forward diode voltage i f =8a 2.5 v
inchange semiconductor product specification 3 silicon npn power transistors BDX53/a/b/c package outline fig.2 outline dimensions
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